Philips bfg135 3 free download

File name bfg135_3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, age 4 1 emitter intended for wideband amplifier applications. The small emitter 2 base structures, with integrated 3 emitter emitter-ballasting resistors, ensure 4 collector high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile. 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 25 V VCEO collector-emitter voltage open base - - 15 V IC DC collector current - - 150 mA Ptot total power dissipation up to Ts = 145